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To keep the cell data state from being degraded by the word-line (WL) disturb due to the charge pumping and to reduce the refresh busy rate, a sense amplifier (S/A) is arranged for every bit-line (BL) and replenishes data "1" cells' bodies with holes which are lost by the disturb. Zipper closure that securely keeps the bag closed and prevents the tiniest of your items from falling out. Suitable for your family trip to pack all men, women toiletries. The key idea of the proposed structure is that the field oxide does not consume the silicon film on buried oxide completely, so that the well contact can suppress the body potential increase in SOI MOSFET through the remaining silicon film. Foldable, portable and lightweight when travelling. 18 /spl mu/m) on SOI. SOIDRAM chenille letter makeup bags are perfect for travel, a day spent outside, or for everyone looking to better organize their bathroom counter. 99 $9. 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This 1T-DRAM memory does not suffer from super-coupling effect and can. Borschberg 2 1STI, IMM, LEG, EPFL (Swiss Federal Institute of. The top layer of our makeup bag features a spacious main compartment with a large opening, allowing you to easily see and access your items. Foldable, portable and lightweight when travelling. The interior includes four mesh pockets that can hold a variety. The degradation of the transistor. , Ltd, Tokyo, JapanPatent Application Publication May 30, 2002 Sheet 2 of 5 US 2002/0063286 A1 12 N 110 111 / 12 N-7 ---101a A 103 102 n 100 Fig. It is easy to store small items, makeup brush, etc, to make your daily make-up, eyebrows, eyeliner, cream, lipstick. , “0. The difficult scaling of bulk Dynamic Random Access Memories (DRAMs) has led to various concepts of capacitor-less single-transistor (1T) architectures based on SOI transistor floating-body effects. 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